Abstract The dilute bismide alloy GaAs1-x Bi x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides. molecular-beam heteroepitaxy of nominally 1. 0 eV bandgap bismide on Ge substrates is comprehensively investigated. https://www.jmannino.com/top-offer-Simply-Southern-World-Full-Valentine-T-Shirt-top-buy/