Boost in switching frequency can be achieved by SiC transistors as compared to silicon transistors. That is however another reason that SiC semiconductors might be used to build significantly smaller-sized components. Our All round purpose is to combine the minimal RDS(on) supplied by silicon carbide MOSFETs with an gate drive https://www.facebook.com/permalink.php?story_fbid=pfbid034BJURqY1CwcxhwdAePoFd6bo8AiuGcrPTZwmjYAA13oCTXyEiqfByMHCTLi9wXtNl&id=61562415773754&__cft__[0]=AZX-VKen889G-MxUZLxOqnrksvOX5nFhd6QCqiaFPdm_JlLQTwAlIeXsnbIlN00nchrhFV9GOn54YGAuqE0VBPP9nw1TzRUWFdNrYkVgXg1qv_GM5Lk5VJJ_wI0_1SEkrHLdRmOI-GX0geeIe7V6ZgEIZR-0elZYiEgSV04JUkmYObsc70Gd08I96_iJtCB9Ob78UyzDpMYNX3kDr-pG_63p&__tn__=%2CO%2CP-R